Cspeed
Laser Design Engineer (Epi/Device)
Palo Alto, CA
Sponsorship not specifiedDetected 41 days ago
PythonMATLABANSYSElectrical EngineeringCommunication
About the role
- Cspeed IO is a stealth start up backed by Sutter Hill Ventures and Atreides Capital - headquartered in Palo Alto, CA.
- Education Ph.D. in Electrical Engineering, Applied Physics, Materials Science, or a closely related discipline with emphasis in semiconductor photonics, optoelectronics, or III-V laser devices.
Responsibilities
- Design and optimize III-V heterostructures and multi-quantum well (MQW) active regions for laser, SOA, and electroabsorption modulator applications, with explicit consideration of growth tolerance, process variation, and production yield
- develop and maintain active region simulation models using commercial tools (e.g., band structure solvers, 1-D optical confinement solvers, traveling wave laser models).
- Simulate and optimize laser waveguide geometry, optical confinement factor, far-field profiles, and cavity design parameters for manufacturability
- perform grating simulation for DFB and DBR structures including coupling coefficient, stopband, and SMSR - with design margins appropriate for high-volume foundry execution, not worst-case lab conditions.
- design for specification compliance across all operating conditions, not only at nominal temperature and center wavelength.
- Design and simulate electroabsorption modulator (EAM) structures - including quantum-confined Stark effect active regions, waveguide integration, and modulation bandwidth - for integrated and stand-alone modulator products
- Serve as the primary technical interface to epitaxy foundry partners: specify growth recipes, review and approve process travelers, evaluate growth run results, and drive resolution of material quality issues.
- Collaborate with device layout, process engineering, FA, and systems teams to translate simulation results and device physics requirements into manufacturable designs
- communicate findings through technical reports and design reviews.
- Design and optimize III-V heterostructures and multi-quantum well (MQW) active regions for laser, SOA, and electroabsorption modulator applications, with explicit consideration of growth tolerance, process variation, and production yield; develop and maintain active region simulation models using commercial tools (e.g., band structure solvers, 1-D optical confinement solvers, traveling wave laser models).
Requirements
- Experience with electroabsorption modulator device design - QCSE active region engineering, EAM integration, and modulation bandwidth optimization - for integrated and stand-alone modulator products.
Nice to have
- Hands-on characterization experience with integrated laser-modulator devices or stand-alone EAMs (extinction ratio, insertion loss, chirp, frequency response).
- Experience defining technical specifications for III-V optical products that account for production distributions, driver circuit interoperability, and packaging or integration constraints.
- Familiarity with optical communications standards and key link budget parameters (AOP, OMA, TDECQ, BER, coupling loss).
- Hands-on experience with GDS mask design and layout generation for laser and modulator devices.
- Exposure to failure analysis or reliability qualification methods as applied to III-V optical devices.
- Ph.D. in Electrical Engineering, Applied Physics, Materials Science, or a closely related discipline with emphasis in semiconductor photonics, optoelectronics, or III-V laser devices.
This listing is sourced directly from Cspeed's careers page and normalized into a canonical job model.